? semiconductor components industries, llc, 2006 march, 2006 ? rev. 5 1 publication order number: pzta92t1/d pzta92t1 preferred devices high voltage transistor pnp silicon features ? pb ? free package is available maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit collector-emitter voltage v ceo ? 300 vdc collector-base voltage v cbo ? 300 vdc emitter-base voltage v ebo ? 5.0 vdc collector current i c ? 500 adc total power dissipation up to@ t a = 25 c (note 1) p d 1.5 w storage temperature range t stg ? 65 to 150 c junction temperature t j 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? ambient (note 1) r ja 83.3 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on a fr-4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pa d for the collector lead = 0.93 sq in. sot ? 223 case 318e ? 04 style 1 marking diagram preferred devices are recommended choices for future use and best overall value. sot ? 223 package pnp silicon high voltage transistor surface mount 1 2 3 4 see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information 1 ayw p2d p2d = specific device code a = assembly location y = year w = work week = pb ? free package (note: microdot may be in either location) http://onsemi.com collector 2,4 base 1 emitter 3
pzta92t1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristics symbol min max unit off characteristics collector-emitter breakdown voltage (note 2) (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 300 ? vdc collector-base breakdown voltage (i c = ? 100 adc, i e = 0) v (br)cbo ? 300 ? vdc emitter-base breakdown voltage (i e = ? 100 adc, i c = 0) v (br)ebo ? 5.0 ? vdc collector-base cutoff current (v cb = ? 200 vdc, i e = 0) i cbo ? ? 0.25 adc emitter-base cutoff current (v be = ? 3.0 vdc, i c = 0) i ebo ? ? 0.1 adc on characteristics dc current gain (i c = ? 1.0 madc, v ce = ? 10 vdc) (i c = ? 10 madc, v ce = ? 10 vdc) (i c = ? 30 madc, v ce = ? 10 vdc) h fe 25 40 40 ? ? ? ? saturation voltages (i c = ? 20 madc, i b = ? 2.0 madc) (i c = ? 20 madc, i b = ? 2.0 madc) v ce(sat) v be(sat) ? ? ? 0.5 ? 0.9 vdc dynamic characteristics collector ? base capacitance @ f = 1.0 mhz (v cb = ? 20 vdc, i e = 0) c cb ? 6.0 pf current ? gain ? bandwidth product (i c = ? 10 madc, v ce = ? 20 vdc, f = 100 mhz) f t 50 ? mhz 2. pulse test conditions, t p = 300 s, 0.02. figure 1. dc current gain i c , collector current (ma) 300 0.1 1.0 10 250 200 150 0 h fe , dc current gain t j = +125 c 25 c ?55 c v ce = 10 vdc 100 50 100
pzta92t1 http://onsemi.com 3 figure 2. capacitance i c , collector current (ma) 150 90 70 50 30 10 t j = 25 c v ce = 20 vdc f = 20 mhz f, current?gain bandwidth (mhz) t 1 figure 3. current ? gain ? bandwidth 130 21 c, capacitance (pf) v r , reverse voltage (v) 0.1 100 0.1 10 1.0 10 1000 c ib @ 1mhz 100 1.0 c cb @ 1mhz i c , collector current (ma) v, voltage (v) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 110 3579 19 17 15 13 11 v be(on) @ 25 c, v ce = 10 v v ce(sat) @ 25 c, i c /i b = 10 v be(sat) @ 25 c, i c /i b = 10 v ce(sat) @ 125 c, i c /i b = 10 v ce(sat) @ ?55 c, i c /i b = 10 v be(sat) @ 125 c, i c /i b = 10 v be(sat) @ ?55 c, i c /i b = 10 v be(on) @ 125 c, v ce = 10 v v be(on) @ ?55 c, v ce = 10 v figure 4. ?on? voltages ordering information device package shipping ? pzta92t1 sot ? 223 1000 / tape & reel PZTA92T1G sot ? 223 (pb ? free) 1000 / tape & reel
pzta92t1 http://onsemi.com 4 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue l *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. base 2. collector 3. emitter 4. collector 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 pzta92t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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